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ABB 5SHY4045L0004 3BHB021400R0002 3BHE039203R0101 GVC736CE101 可控硅 半導(dǎo)體 

大家使用的是單向晶閘管，也就是人們常說的普通晶閘管，它是由四層半導(dǎo)體材料組成的，有三個PN結(jié)，對外有三個電極〔圖2(a) 〕∶第一層P型半導(dǎo)體引出的電極叫陽極A，第三層P型半導(dǎo)體引出的電極叫控制極G，第四層N型半導(dǎo)體引出的電極叫陰極K。從晶閘管的電路符號〔圖2(b) 〕可以看到，它和二極管一樣是一種單方向?qū)щ姷钠骷?，關(guān)鍵是多了一個控制極G，這就使它具有與二極管完全不同的工作特性。

以硅單晶為基本材料的P1N1P2N2四層三端器件,起始于1957年，因為它的特性類似于真空閘流管，所以國際上通稱為硅晶體閘流管，簡稱晶閘管T，又因為晶閘管最初的在靜止整流方面，所以又被稱之為硅可控整流元件，簡稱為可控硅SCR.

在性能上，可控硅不僅具有單向?qū)щ娦?，而且還具有比硅整流元件（俗稱”死硅”)更為可貴的可控性。它只有導(dǎo)通和關(guān)斷兩種狀態(tài)。

可控硅能以毫安級電流控制大功率的機電設(shè)備，如果超過此功率，因元件開關(guān)損耗顯著增加，允許通過的平均電流相降低，此時，標稱電流應(yīng)降級使用。

可控硅的優(yōu)點很多，例如:以小功率控制大功率，功率放大倍數(shù)高達幾十萬倍;反應(yīng)極快，在微秒級內(nèi)開通、關(guān)斷;無觸點運行，無火花、無噪音;效率高，成本低等等。

可控硅的弱點:靜態(tài)及動態(tài)的過載能力較差;容易受干擾而誤導(dǎo)通?？煽毓鑿耐庑紊戏诸愔饕?螺栓形、平板形和平底形。

可控硅元件的結(jié)構(gòu)

不管可控硅的外形如何，它們的管芯都是由P型硅和N型硅組成的四層P1N1P2N2結(jié)構(gòu)。見圖1。它有三個PN結(jié)(J1、12、J3)，從J1結(jié)構(gòu)的P1層引出陽極A，從N2層引出陰級K，從P2層引出控制極G，所以它是一種四層三端的半導(dǎo)體器件。

We use a unidirectional thyristor, which is often referred to as an ordinary thyristor, which is composed of four layers of semiconductor material, with three PN junction, and three external electrodes (Figure 2(a)) : the electrode led by the first layer of P-type semiconductor is called anode A, the electrode led by the third layer of P-type semiconductor is called the control pole G, and the electrode led by the fourth layer of N-type semiconductor is called the cathode K. From the circuit symbol of the thyristor (Figure 2(b)), it can be seen that it is a single-direction conductive device like the diode, and the key is that there is a control pole G, which makes it have completely different working characteristics from the diode.

P1N1P2N2 four-layer three-terminal device with silicon single crystal as the basic material began in 1957, because its characteristics are similar to vacuum thyristor, so it is known internationally as silicon thyristor, referred to as thyristor T, and because the thyristor was originally in static rectification, it is also known as silicon controllable rectifier element, referred to as thyristor SCR.

In terms of performance, thyristor not only has unidirectional conductivity, but also has more valuable controllability than silicon rectifier elements (commonly known as "dead silicon"). It only has two states: on and off.

SCR can control high-power electromechanical equipment with milliampere-level current, if the power exceeds this, due to the significant increase in component switching loss, the average current phase allowed to pass is reduced, at this time, the nominal current should be degraded.

Thyristor has many advantages, such as: to control high power with small power, power amplification up to hundreds of thousands of times; The response is extremely fast, opening and closing in microseconds; No contact operation, no spark, no noise; High efficiency, low cost and so on.

The weakness of thyristor: static and dynamic overload capacity is poor; Easily misled by interference. Thyristor from the appearance of the main classification: bolt shape, flat plate shape and bottom shape.

Structure of thyristor element

Regardless of the shape of the thyristor, their core is a four-layer P1N1P2N2 structure composed of P-type silicon and N-type silicon. See Figure 1. It has three PN junctions (J1, 12, J3), from the P1 layer of the J1 structure leads to the anode A, from the N2 layer leads to the negative level K, from the P2 layer leads to the control pole G, so it is a four-layer three-terminal semiconductor device.

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